PSMN015-100P データシート - NXP Semiconductors.
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NXP Semiconductors.
General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
FEATUREs and benefits
◾ Low conduction losses due to low
on-state resistance
◾ Rated for avalanche ruggedness
APPLICATIONs
◾ DC-to-DC convertors
◾ Switched-mode power supplies
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors.