PRSS0004ZJ-A データシート - Renesas Electronics
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Renesas Electronics
Features
• Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = −100 A/μs)
• Low forward voltage: VF = 2.5 V typ. (at IF = 10 A)
• Low reverse current: IR = 1 μA max. (at VR = 600 V)
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode ( Rev : 2010 )
Renesas Electronics
Single Diode Ultra Fast Recovery Diode ( Rev : 2011 )
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics
Single Diode Ultra Fast Recovery Diode ( Rev : 2010 )
Renesas Electronics
Single Diode Ultra Fast Recovery Diode
Renesas Electronics