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PMBTA44 データシート - Nexperia B.V. All rights reserved
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Nexperia B.V. All rights reserved
General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
FEATUREs
■ Low current (max. 300 mA)
■ High voltage (max. 400 V)
■ AEC-Q101 qualified
APPLICATIONs
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch mode power supply
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Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
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600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
NXP Semiconductors.