部品番号
PM150CSE060
コンポーネント説明
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MITSUBISHI ELECTRIC
FEATURE
a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3φ 150A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 15/18.5kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls