Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty 1.2 - 1.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 1µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, 25W, 300~s Pulse, 10% Duty 1.2 - 1.4 GHz
Tyco Electronics
Radar Pulsed Power Transistor 8W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor 20W, 1.2-1.4 GHz, 2ms Pulse, 10% Duty
M/A-COM Technology Solutions, Inc.
Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty 1.2 - 1.4 GHz
Tyco Electronics