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PESD3V3S2UQ(2008) データシート - NXP Semiconductors.

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PESD3V3S2UQ

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13 Pages

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296.9 kB

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NXP
NXP Semiconductors. 

DESCRIPTION
Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage.


FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A
• Low reverse leakage current: IRM < 1 nA
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.


APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.


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