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PDTA123JMB
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NXP Semiconductors.
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PDTA123JMB データシート - NXP Semiconductors.
NXP Semiconductors.
General description
PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC123JMB.
FEATUREs and benefits
■ 100 mA output current capability
■ Reduces component count
■ Built-in bias resistors
■ Reduces pick and place costs
■ Simplifies circuit design
■ AEC-Q101 qualified
■ Leadless ultra small SMD plastic package
■ Low package height of 0.37 mm
APPLICATIONs
■ Low-current peripheral driver
■ Control of IC inputs
■ Replaces general-purpose transistors in digital applications
■ Mobile applications
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PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Nexperia B.V. All rights reserved
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Nexperia B.V. All rights reserved
NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
Nexperia B.V. All rights reserved
NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ
NXP Semiconductors.
PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Nexperia B.V. All rights reserved
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