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PD85006L-E データシート - STMicroelectronics

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部品番号
PD85006L-E

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17 Pages

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518.2 kB

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ST-Microelectronics
STMicroelectronics 

Description
The PD85006L-E is a common source N-channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. PD85006L-E’s superior linearity performance makes it an ideal solution for mobile radio applications.


FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 6 W with 15 dB gain @ 870 MHz / 13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european directive


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