Description
The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.

FEATUREs
■ Excellent thermal stability
■ Common source configuration
■ POUT = 70 W with 14.7dB gain @945 MHz/28 V
■ New RF plastic package