PD55015S-E データシート - STMicroelectronics
メーカー

STMicroelectronics
Description
The PD55015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55015 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD55015’s superior linearity performance makes it an ideal solution for car mobile radio.
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 15W with 14dB gain @ 500MHz / 12.5V
■ New RF plastic package
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2007 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2008 )
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs ( Rev : 2011 )
STMicroelectronics
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2010_05 )
STMicroelectronics
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
STMicroelectronics
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs ( Rev : 2006 )
STMicroelectronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs ( Rev : 2012 )
STMicroelectronics