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PBSS5230T データシート - NXP Semiconductors.

PBSS5230T image

部品番号
PBSS5230T

Other PDF
  no available.

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page
10 Pages

File Size
213 kB

メーカー
NXP
NXP Semiconductors. 

General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4230T.


FEATUREs and benefits
■ Low collector-emiter saturation voltage
   VCEsat
■ High collector current capability:
   IC and ICM
■ Higher efficiency leading to less heat
   generation
■ AEC-Q101 qualified


APPLICATIONs
■ DC-to-DC conversion
■ Supply line switching
■ Battery charger
■ LCD backlighting
■ Driver in low supply voltage
   applications (e.g. lamps and LEDs)
■ Inductive load driver (e.g. relays,
   buzzers and motors)


部品番号
コンポーネント説明
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メーカー
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