部品番号
PBSS5230T
Other PDF
no available.
PDF
page
10 Pages
File Size
213 kB
メーカー

NXP Semiconductors.
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4230T.
FEATUREs and benefits
■ Low collector-emiter saturation voltage
VCEsat
■ High collector current capability:
IC and ICM
■ Higher efficiency leading to less heat
generation
■ AEC-Q101 qualified
APPLICATIONs
■ DC-to-DC conversion
■ Supply line switching
■ Battery charger
■ LCD backlighting
■ Driver in low supply voltage
applications (e.g. lamps and LEDs)
■ Inductive load driver (e.g. relays,
buzzers and motors)