General description
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.

NPN complement: PBSS4160V.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High efficiency leading to less heat generation
■ Reduces printed-circuit board area required
■ Cost effective replacement for medium power transistors BCP52 and BCX52

APPLICATIONs
■ Major application segments
   ◆ Automotive
   ◆ Telecom infrastructure
   ◆ Industrial
■ Power management
   ◆ DC-to-DC conversion
   ◆ Supply line switching
■ Peripheral driver
   ◆ Driver in low supply voltage applications (e.g. lamps and LEDs)
   ◆ Inductive load driver (e.g. relays, buzzers and motors)