General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ Dual low power switches (e.g. motors, fans)
■ Automotive applications