部品番号
PBHV8540Z
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NXP Semiconductors.
PBHV8540Z データシート - NXP Semiconductors.
NXP Semiconductors.
General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
FEATUREs
■ High voltage
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ AEC-Q101 qualified
APPLICATIONs
■ Electronic ballast for fluorescent lighting
■ LED driver for LED chain module
■ LCD backlighting
■ High Intensity Discharge (HID) front lighting
■ Automotive motor management
■ Hook switch for wired telecom
■ Switch mode power supply
部品番号
コンポーネント説明
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メーカー
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor ( Rev : 2008 )
NXP Semiconductors.
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
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