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PA1952 データシート - Renesas Electronics

PA1952 image

部品番号
PA1952

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10 Pages

File Size
179.4 kB

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Renesas
Renesas Electronics 

DESCRIPTION
The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source.
The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• 1.8 V drive available
• Low on-state resistance
   RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A)
   RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
   RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)


部品番号
コンポーネント説明
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メーカー
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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