Description:
OPB710 and OPB710Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. OPB730and OPB730Fconsist of a gallium arsenide infrared emitting diode and an NPN silicon photodarlington.

FEATUREs:
• Choice of phototransistor or photodarlington output
• Unfocused for sensing diffuse surface
• Mounted on standard TO-72 header
• Available in clear encapsulating epoxy (OPB710, OPB730)
• Filtered to reduce the effect of visible or fluorescent light(OPB710F, OPB730F)

APPLICATIONs:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor