Description:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO- 46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon phototransistors. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors.

FEATUREs:
• TO-46 hermetically sealed package with lens
• Twice the power output of GaAs at same drive current
• Characterized to define infrared energy along mechanical axis of device
• Narrow beam angle
• Processed to MIL-PRF-19500

APPLICATIONs:
• Non-contact reflective object sensor
• Assembly line automation
• Machine automation
• Machine safety
• End of travel sensor
• Door sensor
• Military and harsh environments