NX8510UD データシート - Renesas Electronics
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Renesas Electronics
DESCRIPTION
The NX8510UD is a 1 470 to 1 610 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical sub-assembly) with InGaAs monitor PIN-PD in a receptacle type package designed for SFF/SFP transceiver with LC duplex receptacle. This device is ideal for 2.5 Gb/s CWDM application.
FEATURES
• Internal optical isolator
• Optical output power Pf = 2.0 mW
• Peak emission wavelength λp = 1 470 to 1 610 nm (Based on CWDM)
• Low threshold current lth = 10 mA TYP. @ TC = 25°C
• Operating case temperature range TC = −20 to +85°C
• Side mode suppression ratio SMSR = 40 dB
• InGaAs monitor PIN-PD
• Small package φ 3.8 mm TOSA (Total length 12.0 mm MAX.)
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
1 470 TO 1 610 nm FOR CWDM 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
California Eastern Laboratories.
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 550 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
Renesas Electronics