datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  California Eastern Laboratories.  >>> NX6410GH PDF

NX6410GH データシート - California Eastern Laboratories.

NX6410GH image

部品番号
NX6410GH

Other PDF
  no available.

PDF
DOWNLOAD     

page
7 Pages

File Size
149.2 kB

メーカー
CEL
California Eastern Laboratories. 

DESCRIPTION
The NX6410GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.


FEATURES
• Optical output power Po = 14.0 mW
• Low threshold current lth = 10 mA
• Differential efficiency ηd = 0.3 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm


APPLICATION
• 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)


部品番号
コンポーネント説明
ビュー
メーカー
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
PDF
California Eastern Laboratories.
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
PDF
California Eastern Laboratories.

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]