NX6410GH データシート - California Eastern Laboratories.
メーカー

California Eastern Laboratories.
DESCRIPTION
The NX6410GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
FEATURES
• Optical output power Po = 14.0 mW
• Low threshold current lth = 10 mA
• Differential efficiency ηd = 0.3 W/A
• Wide operating temperature range TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package φ 5.6 mm
• Focal point 7.5 mm
APPLICATION
• 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.
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1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Electronics
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Laboratories.
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
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California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Laboratories.