NX5306 データシート - NEC => Renesas Technology
メーカー

NEC => Renesas Technology
DESCRIPTION
NEC’s NX5306 series is a 1310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) systems, long haul STM-1 (L-1.1), short haul STM-4 (S-4.1), and ITU-T recommendations.
FEATURES
• OPTICAL OUTPUT POWER:
PO = 5.0 mW
• LOW THRESHOLD CURRENT :
ITH = 10 mA
• HIGH SPEED:
tr = 0.3 ns MAX
tf = 0.3 ns MAX
• WIDE OPERATING TEMPERATURE RANGE:
TC = -40 to +85°C
• InGaAs MONITOR PIN-PD
• CAN PACKAGE:
ø5.6 mm
• BASED ON TELCORDIA RELIABILITY
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NEC's 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
California Eastern Laboratories.
NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
California Eastern Laboratories.
NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
California Eastern Laboratories.
NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS ( Rev : V2 )
California Eastern Laboratories.