DESCRIPTION
The NX25F011B, NX25F021B, and NX25F041B Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlashs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 2.5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, and maximize battery life.

FEATURES
• Flash Storage for Resource-Limited Systems
   – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
• 0.35µ NexFlashMemory Technology
   – 1M/2M/4M-bit with 512/1024/2048 sectors
   – Small 264-byte sectors
   – Erase/Write time of 7.5 ms/sector (typical)
   – Optional 8KB (32 sector) block erase for faster programming
• Ultra-low Power for Battery-Operation
   – Single 5V or 3V supply for read and erase/write
   – 1 mA standby current, 2.5 mA active @ 3V (typical)
   – Low frequency read command for lower power
• 4-pin SPI Serial Interface
   – Easily interfaces to popular microcontrollers
   – Clock operation as fast as 20 MHz
• On-chip Serial SRAM
   – Single 264-byte Read/Write SRAM buffer
   – Use in conjunction with or independent of Flash
   – Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
   – Byte-level addressing for reads and SRAM writes
   – Transfer or compare sector to SRAM
   – Versatile hardware and software write-protection
   – In-system electronic part number option
   – Removable Serial Flash Module package option
   – Serial Flash Development Kit