DESCRIPTION
The NX25F011A and NX25F041A Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlash's patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 5 ms increase system performance, minimize power-on time, and maximize battery life.

FEATURES
• Flash Storage for Resource-Limited Systems
   – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data
• NexFlash Serial Flash Memory
   – Patented single transistor EEPROM technology
   – High-density, low-voltage & power, cost-effective
   – Small 264-byte sectors
   – 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
   – Single 5V or 3V supply for read and erase/write
   – 1 µA standby current, 5 mA active @ 3V (typical)
   – Low frequency read command for very low power
   – No pre-erase. Erase/Write time of 5 ms/sector @ 5V ensures efficient battery use JUNE 1999
• 4-pin SPI Serial Interface
   – Easily interfaces with popular microcontrollers
   – Clock operation as fast as 16 MHz
• On-chip Serial SRAM
   – Dual 264-byte Read/Write SRAM buffers
   – Use in conjunction with or independent of Flash
   – Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
   – Byte-level addressing
   – Transfer and compare sector to SRAM commands
   – Versatile hardware and software write-protection
   – Alternate oscillator frequency for EMI sensitive applications.
   – In-system electronic part number identification
   – Removable Serial Flash Module package option