NVD5802N(2011) データシート - ON Semiconductor
メーカー
ON Semiconductor
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• MSL 1/260°C
• AEC Q101 Qualified
• 100% Avalanche Tested
• AEC Q101 Qualified − NVD5802N
• These Devices are Pb−Free and are RoHS Compliant
APPLICATIONs
• CPU Power Delivery
• DC−DC Converters
• Motor Driver
Power MOSFET 40 V, 6.7 m, 40 A, Single N−Channel ( Rev : 2011 )
ON Semiconductor
Power MOSFET 40 V, 6.7 m, 40 A, Single N−Channel ( Rev : 2013 )
ON Semiconductor
MOSFET – Power, Single N-Channel 40 V, 6.7 m, 40 A
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Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK ( Rev : 2016 )
ON Semiconductor
Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK ( Rev : 2012 )
ON Semiconductor
MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A
ON Semiconductor
Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK ( Rev : 2014 )
ON Semiconductor
