Power MOSFET
30 V, 65 A, Single N−Channel, SO−8 FL

FEATUREs
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant

APPLICATIONs
• CPU Power Delivery
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• Telecom Secondary Side Rectification