Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

FEATUREs:
• High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
   hFE = 400 (Min) @ IC = 50A
• Diode Protection to Rated IC
• Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
• Junction Temperature to +200°C