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NT256S64VH8A0GM-8B データシート - Nanya Technology

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部品番号
NT256S64VH8A0GM-8B

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12 Pages

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112.3 kB

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Nanya Technology 

Description
NT256S64VH8A0GM is a 144-pin Synchronous DRAM Small Outline Dual In-line Memory Module (SO DIMM) that is organized as a 32Mx64 high-speed memory array. The SO DIMM uses eight 16Mx16 SDRAMs in 400mil TSOP II packages and achieves high-speed data transfer rates of up to 133 MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.


FEATUREs
● 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module
● 32Mx64 Synchronous DRAM SO DIMM
● Inputs and outputs are LVTTL (3.3V) compatible
● 10 Ohm Resistors on DQs
● Single 3.3V ± 0.3V Power Supply
● Single Pulsed RAS interface
● SDRAMs have four internal banks
● Fully Synchronous to positive Clock Edge
● Data Mask for Byte Read/Write control
● Auto Refresh (CBR) and Self Refresh
● Automatic and controlled Precharge Commands
● Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8,
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
● Suspend Mode and Power Down Mode
● 13/9/2 Addressing (Row/Column/Bank)
● 8192 refresh cycles distributed across 64ms
● Serial Presence Detect
● Gold contacts

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