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NT256S64V8HC0G-75B データシート - Nanya Technology

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部品番号
NT256S64V8HC0G-75B

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10 Pages

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89.3 kB

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Nanya Technology 

Description
NT256S64V8HC0G is unbuffered 168-pin Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which is organized as 32Mx64 high-speed memory arrays and is configured as two 16M x 64 physical bank. The DIMM uses sixteen 16Mx8 SDRAMs in 400mil TSOP II pack-ages. The DIMM achieves high-speed data transfer rates of up to 133MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.


FEATUREs
● 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module
● Intended for PC133 applications
    - Clock Frequency: 133MHz
    - Clock Cycle: 7.5ns
    - Clock Assess Time: 5.4ns
● Inputs and outputs are LVTTL (3.3V) compatible
● Single 3.3V ± 0.3V Power Supply
● Single Pulsed RAS interface
● SDRAMs have 4 internal banks
● Module has 2 physical bank
● Fully Synchronous to positive Clock Edge
● Data Mask for Byte Read/Write control
● Auto Refresh (CBR) and Self Refresh
● Automatic and controlled Precharge commands
● Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
● Suspend Mode and Power Down Mode
● 4096 Refresh cycles distributed across 64ms
● Gold contacts
● SDRAMs in TSOP Type II Package
● Serial Presence Detect with Write Protect

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