DESCRIPTION
The NEZ1011-5E is a power GaAs MESFET which provides high gain, high efficiency and high output power in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a Wsi (tungsten silicide) gate structure for high reliability.

FEATURES
• HIGH OUTPUT POWER: 37.0 dBm TYP
• HIGH LINEAR GAIN: 8.0 dB TYP
• HIGH EFFICIENCY: 30% TYP
• INPUT AND OUTPUT INTERNALLY MATCHED FOR OPTIMUM PERFORMANCE