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NESG3032M14-T3
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NESG3032M14-T3 データシート - Renesas Electronics
Renesas Electronics
NPN SiGe RF Transistor for Low Noise, High-Gain
Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)
FEATURES
• The NESG3032M14 is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 PKG)
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