NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)

FEATURES
• The device is an ideal choice for low noise, high-gain amplification
   NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)