DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output Power : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz