General Description
SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics,and other battery powered circuits where fast high-side switching, and low in-line power loss  are needed in a very small outline surface mount package.

FEATUREs
-1.2A, -20 V,  RDS(ON) = 0.27 W@ VGS = -2.7 V
                      RDS(ON) = 0.2 W@ VGS = -4.5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface Mount package.