N82S19 データシート - ETC1
メーカー

ETC1
[Signetics]
DESCRIPTION
The organization of this device allows byte storage of data, including parity. where parity is not monitored, the ninth bit can be used as a tag or status indicator for each word stored. Ideal for scratch-pad, push-down stacks, buffer memories, and other internal memory applications in which cost and performance requirements dictate a wide data path in favor of word depth.
APPLICATIONS
● Buffer memory
● Control register
● FIFO memory
● Push down stacks
● Scratch pad
64-Bit Inverting-Output Bipolar RAM
Advanced Micro Devices
32K x 9 Bit Fast Static RAM
Motorola => Freescale
8K x 9 Bit Fast Static RAM
Motorola => Freescale
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 ( Rev : 1995 )
Integrated Device Technology
CMOS SyncFIFO™ 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 ( Rev : 2017 )
Integrated Device Technology
CMOS SyncFIFO™ 64 x 9, 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
Integrated Device Technology
64-bit TTL bipolar RAM, inverting (3-State)
Philips Electronics
64 x 8 Cascadable FIFO 64 x 9 Cascadable FIFO
Cypress Semiconductor
32K x 9 Static RAM
Cypress Semiconductor
32K x 9 Static RAM
Cypress Semiconductor