FEATURES
GENERAL FEATURES
• Power Supply Operation
   - 2.7 to 3.6 volt for read, erase, and program operations
   - MX29GL256E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
   - MX29GL256E U/D: VI/O=1.65V~3.6V for Input/Output
• Byte/Word mode switchable
   - 33,554,432 x 8 / 16,777,216 x 16
• 64KW/128KB uniform sector architecture
   - 256 equal sectors
• 16-byte/8-word page read buffer
• 64-byte/32-word write buffer
• Extra 128-word sector for security
   - Features factory locked and identifiable, and customer lockable
• Advanced sector protection function (Solid and Password Protect)
• Latch-up protected to 100mA from -1V to 1.5xVcc
• Low Vcc write inhibit : Vcc ≤ VLKO
• Compatible with JEDEC standard
   - Pinout and software compatible to single power supply Flash
• Deep power down mode

PERFORMANCE
• High Performance
   - Fast access time:
      - MX29GL256E H/L: 100ns (VCC=2.7~3.6V), 90ns (VCC=3.0~3.6V)
      - MX29GL256E U/D: 110ns (VCC=2.7~3.6V, V I/O=1.65 to Vcc)
   - Page access time:
      - MX29GL256E H/L: 25ns
      - MX29GL256E U/D: 30ns
   - Fast program time: 10us/word
   - Fast erase time: 0.5s/sector
• Low Power Consumption
   - Low active read current: 10mA (typical) at 5MHz
   - Low standby current: 20uA (typical)
• Typical 100,000 erase/program cycle
• 20 years data retention

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