Power Field Effect Transistor DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate

This Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

FEATUREs
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.3 Ω Max
• Rugged — SOA is Power Dissipation Limited
• Source−to−Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement — VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape
• Pb−Free Package is Available