MTD6N15 データシート, Motorola => Freescale MTD6N15 PDF - DATASHEETBANK

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MTD6N15 データシート - Motorola => Freescale

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MTD6N15

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TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

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Motorola => Freescale

Power Field Effect Transistor DPAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate

This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds
• Low RDS(on) — 0.3 Ω Max
• Rugged — SOA is Power Dissipation Limited
• Source–to–Drain Diode Characterized for Use With Inductive Loads
• Low Drive Requirement — VGS(th) = 4.0 V Max
• Surface Mount Package on 16 mm Tape

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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

Motorola => Freescale

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM

Motorola => Freescale

TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

Motorola => Freescale

TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

Motorola => Freescale

TMOS POWER FET 12 AMPERES RDS(on) = 0.3 OHM 60 and 100 VOLTS

Motorola => Freescale

TMOS POWER FET 6.0 AMPERES, 1000 VOLTS RDS(on) = 1.5 Ω

ON Semiconductor

TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMS

Motorola => Freescale

TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM

Motorola => Freescale

TMOS POWER FET 20 AMPERES 200 VOLTS RDS(on) = 0.16 OHM

Motorola => Freescale

TMOS POWER FET 1.7 AMPERES 60 VOLTS RDS(on) = 0.130 OHM

Motorola => Freescale

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