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MTB30P06VT4G
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MTB30P06VT4G データシート - ON Semiconductor
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30 AMPERES, 60 VOLTS RDS(on) = 80 mΩ
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb−Free Packages are Available
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Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D2PAK
ON Semiconductor
Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel TO–220 and D2PAK ( Rev : 2002 )
ON Semiconductor
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