Description
The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.

FEATUREs
• VF, RD and CJ Matching Options
• Chip, Beam Lead and Packaged Devices
• Hi-Rel Screening per MIL-PRF-19500 and MILPRF-38534 Available