MSC82005 データシート - STMicroelectronics
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STMicroelectronics
DESCRIPTION
The MSC82005 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82005 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range.
■ EMITTER BALLASTED
■ VSWR CAPABILITY ∞:1 @ RATED CONDITIONS
■ REFRACTORY/GOLD METALLIZATION
■ HERMETIC STRIPAC PACKAGE
■ POUT = 5.0 W MIN. WITH 7.0 dB GAIN @ 2.0 GHz
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Advanced Power Technology
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
STMicroelectronics