MSAFX50N20A データシート - Microsemi Corporation
メーカー

Microsemi Corporation
FEATURES
➤ Ultrafast body diode
➤ Rugged polysilicon gate cell structure
➤ Increased Unclamped Inductive Switching (UIS) capability
➤ Hermetically sealed, surface mount power package
➤ Low package inductance
➤ Very low thermal resistance
➤ Reverse polarity available upon request
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE POWER MOSFET
Semelab - > TT Electronics plc
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