RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Typical Performance: VDD = 50 Volts, IDQ = 100 mA

FEATUREs
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 VDD Operation
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
   for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
   R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.