The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ= 2
700 mA
    IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
      Output Power — 40 Watts
      Power Gain — 17 dB
      Efficiency — 26%
      Adjacent Channel Power –
        750 kHz: –45.0 dBc @ 30 kHz BW
        1.98 MHz: –60.0 dBc @ 30 kHz BW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters