The RF MOSFET Line RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment.

• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
   Output Power — 26 Watts
   Power Gain — 16 dB
   Efficiency — 26%
   Adjacent Channel Power —
      750 kHz: -45 dBc @ 30 kHz BW
      1.98 MHz: -60 dBc @ 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.