MRF904 データシート - Microsemi Corporation
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Microsemi Corporation
DESCRIPTION:
Designed primarily for use IN High Gain, low noise general purpose amplifiers.
FEATUREs
• Silicon NPN, high Frequency, To-72 packaged, Transistor
• High Power Gain - GU(max)=11 dB (typ) @ f = 450 MHz
7 dB (typ) @ f = 1 GHz
• Low Noise Figure
NF = 1.5 dB (typ) @ f = 450 MHz
• High FT - 4 GHz (typ) @ IC = 15 mAdc
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
New Jersey Semiconductor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Microsemi Corporation
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Unspecified