RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA,
   Pout = 100 Watts, f = 1990 MHz
      Power Gain — 14.5 dB
      Drain Efficiency — 49%

GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA,
   Pout = 40 Watts Avg., Full Frequency Band (1805-1880 MHz or
   1930-1990 MHz)
      Power Gain — 15 dB
      Drain Efficiency — 35%
      Spectral Regrowth @ 400 kHz Offset = -63 dBc
      Spectral Regrowth @ 600 kHz Offset = -76 dBc
      EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power

FEATUREs
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.