The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz)
   Power Gain - 12.5 dB (Typ) @ 85 Watts CW
   Efficiency - 50% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.