Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
• Guaranteed Performance at 175 MHz, 50 V:
Output Power — 300 W
Gain — 14 dB (16 dB Typ)
Efficiency — 50%
• Low Thermal Resistance — 0.35°C/W
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• S–Parameters Available for Download into Frequency Domain Simulators.
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET ( Rev : V2 )
M/A-COM Technology Solutions, Inc.
RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
M/A-COM Technology Solutions, Inc.
600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET
Motorola => Freescale
600 W, 50 V, 80 MHz N–CHANNEL BROADBAND RF POWER MOSFET
M/A-COM Technology Solutions, Inc.
10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs
Freescale Semiconductor
100 W, 28 V, 400 MHz N–CHANNEL BROADBAND RF POWER MOSFET
Motorola => Freescale
200/150 W, 50 V, 500 MHz N–CHANNEL MOS BROADBAND RF POWER FETs
Motorola => Freescale
RF Power MOSFET Transistor 40 W, 2 - 175 MHz, 28 V
M/A-COM Technology Solutions, Inc.
RF Power MOSFET Transistor 80 W, 2 - 175 MHz, 28 V
M/A-COM Technology Solutions, Inc.
RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.