MRF1517T1 データシート - Motorola => Freescale
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Motorola => Freescale
The RF MOSFET Line
RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2007 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ( Rev : 2006 )
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Motorola => Freescale
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Tyco Electronics
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor