RF Power FET 300W, 175MHz, 28V
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.
• Guaranteed performance at 175MHz, 28V:
Output power: 300W
Gain: 12dB (14dB Typ.)
Efficiency: 50%
• Low thermal resistance: 0.35°C/W
• Ruggedness tested at rated output power
• Nitride passivated die for enhanced reliability
RF Power FET 150W, to 175MHz, 28V
M/A-COM Technology Solutions, Inc.
50V, 300W, 175MHz RF POWER VERTICAL MOSFET
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RF Power MOSFET Transistor 120W, 2-175MHz, 28V ( Rev : V2 )
M/A-COM Technology Solutions, Inc.