MP4304 データシート - Toshiba
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Toshiba
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
• Small package by full molding (SIP 12 pin)
• High collector power dissipation (4-device operation)
: PT = 4.4 W (Ta = 25°C)
• High collector current: IC (DC) = 3 A (max)
• High DC current gain: hFE = 600 (min) (VCE = 2 V, IC = 1 A)
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors inOne)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors 4 in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Four Darlington Power Transistors in One)
Toshiba
Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Toshiba
Silicon NPN Epitaxial Type Power Transistor Module (Four Darlington Power Transistors in One)
Toshiba
MODULE SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR (FOUR DARLINGTON POWER TRANSISTORS IN ONE) ( Rev : 2000 )
Toshiba
Module Silicon NPN Epitaxial Type Power Transistor (Four Darlington Power Transistors in One)
Toshiba
TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Four Darlington Power Transistors in One)
Toshiba